NTLJF3117PTAG【PDF 3/8 页】MOSFET P-CH 20V 2.3A 6-WDFN

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NTLJF3117P

MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

t d(ON)

5.5

ns

Rise Time

Turn-Off Delay Time

Fall Time

t r

t d(OFF)

t f

V GS = -4.5 V, V DD = -10 V,

I D = -2.0 A, R G = 2.0 W

15

19.8

21.6

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Recovery Voltage

V SD

V GS = 0 V, IS = -1.0 A

T J = 25 ° C

T J = 125 ° C

-0.75

-0.64

-1.0

V

Reverse Recovery Time

t RR

16.2

Charge Time

Discharge Time

Reverse Recovery Time

t a

t b

Q RR

V GS = 0 V, d ISD /d t = 100 A/ m s,

I S = -1.0 A

10.6

5.6

5.7

ns

nC

5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)

Parameter

Maximum Instantaneous

Symbol

V F

Test Conditions

I F = 0.1 A

Min

Typ

0.34

Max

0.39

Unit

V

Forward Voltage

I F = 1.0 A

0.47

0.53

Maximum Instantaneous

Reverse Current

I R

V R = 30 V

V R = 20 V

17

3.0

20

8.0

m A

V R = 10 V

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 85 ° C unless otherwise noted)

2.0

4.5

Parameter

Maximum Instantaneous

Symbol

V F

Test Conditions

I F = 0.1 A

Min

Typ

0.22

Max

0.35

Unit

V

Forward Voltage

I F = 1.0 A

0.40

0.50

Maximum Instantaneous

Reverse Current

I R

V R = 30 V

V R = 20 V

0.22

0.11

2.5

1.6

mA

V R = 10 V

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 125 ° C unless otherwise noted)

0.06

1.2

Parameter

Maximum Instantaneous

Symbol

V F

Test Conditions

I F = 0.1 A

Min

Typ

0.2

Max

0.29

Unit

V

Forward Voltage

I F = 1.0 A

0.4

0.47

Maximum Instantaneous

Reverse Current

I R

V R = 30 V

V R = 20 V

2.0

1.1

20

10.9

mA

V R = 10 V

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)

0.63

8.4

Capacitance

Parameter

Symbol

C

Test Conditions

V R = 5.0 V, f = 1.0 MHz

Min

Typ

38

Max

Unit

pF

7. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

8. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm 2 , 2 oz cu.

9. Pulse Test: pulse width v 300 m s, duty cycle v 2%.

10. Switching characteristics are independent of operating junction temperatures.

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